High‑thermal aluminum nitride filler, CAS 24304‑00‑5. Manufactured by carbothermal nitridation synthesis, followed by grinding, surface passivation and precise particle classification. This inorganic nitride filler delivers high thermal conductivity together with superior electrical insulation. It is incorporated into CPO high‑conductive EMC molding compound and insulating resin systems to improve heat dissipation, reduce thermal expansion and reinforce polymer matrix for high‑density semiconduc

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Product Detail PageAluminum Nitride Filler High‑Thermal CAS 24304‑00‑5, for CPO High‑Conductive EMC Encapsulation & Insulating ResinThis high‑thermal aluminum nitride filler is produced via carbothermal reduction‑nitridation reaction under high‑temperature nitrogen atmosphere. Subsequent grinding, de‑agglomeration, surface passivation and multi‑stage air classification yield the finished filler grade. Strict production control restricts residual oxygen and metallic impurities. Special surface passivation treatment mitigates the inherent hydrolysis tendency of aluminum nitride particles when exposed to humid environment, which is essential for electronic‑grade resin compounding.

In CPO high‑thermal EMC epoxy molding compound formulations, this AlN filler is blended into epoxy molding resin. It forms continuous thermal conduction networks within the cured molding matrix. Compared with conventional alumina EMC fillers, aluminum nitride provides significantly higher thermal conductivity while maintaining excellent electrical insulation. The filler lowers overall coefficient of thermal expansion of the EMC composite, alleviating thermal‑mechanical stress induced by cyclic temperature changes on high‑density CPO optoelectronic chips, and reduces risks of package cracking, delamination and warpage during long‑term service.

For thermally‑conductive insulating resin systems including potting resin and casting resin, this aluminum nitride filler improves bulk thermal dissipation capacity of cured resin parts without sacrificing insulation performance. It is suitable for potting high‑power optoelectronic modules used in CPO assemblies.

Custom silane surface modification can be processed to further improve interfacial affinity between AlN particles and epoxy polymer matrix. Optimized interfacial bonding reduces internal thermal resistance of the composite, enhances flexural and impact strength, and improves moisture‑resistance of cured resin components. This filler can be compounded with spherical alumina or boron nitride to create hybrid filler systems, balancing formulation viscosity, filling loading and thermal conductivity to meet customized EMC and insulating‑resin specifications.

Aluminum nitride remains sensitive to moisture even after passivation. Hermetically sealed low‑humidity storage is required. During weighing, pneumatic conveying and compounding operations, cross‑contamination with oxide‑based ceramic fillers must be prevented. Unwanted oxide impurities will degrade the thermal‑conductive performance of finished EMC and insulating resin products. This high‑thermal aluminum nitride filler serves as a premium functional inorganic filler for CPO high‑conductive EMC encapsulation materials and thermally‑conductive insulating resin for advanced semiconductor and optoelectronic packaging.

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.