JSYAPG‑K30V is a high‑concentration colloidal‑silica‑based CMP polishing slurry for semiconductor processing. Through optimized synthesis and surface‑stabilization technology, the slurry sustains over 30 wt% silica solid content without spontaneous particle agglomeration. It is developed for ILD inter‑layer dielectric planarization and poly‑silicon planarization processes. This concentrated base slurry provides flexible formulation options; users can dilute with ultra‑pure deionized water to adj

Product Detail

Product Detail Page: JSYAPG‑K30V CMP slurry consists of spherical amorphous colloidal silica nanoparticles uniformly dispersed in high‑purity aqueous medium. Advanced surface modification and electrostatic stabilization technology maintain excellent suspension stability at high solid loading. Rigorous filtration processes eliminate oversized coarse particles during production, which is critical for reducing scratch‑related wafer defects. Stringent purification control minimizes trace metallic and ionic contaminants to satisfy electronic‑grade standards.

In ILD inter‑layer dielectric planarization, high abrasive particle concentration helps achieve desirable oxide removal rate, which improves wafer‑processing throughput inside semiconductor fabrication facilities. It effectively eliminates topographic steps on dielectric layers and provides flat wafer surfaces for subsequent photolithography and thin‑film deposition operations.

For poly‑silicon planarization, the silica abrasive implements mild yet effective chemical‑mechanical removal on poly‑Si films. The well‑controlled particle‑size distribution suppresses micro‑scratches and surface pits on poly‑silicon. It stabilizes removal uniformity across the whole wafer, which is essential for gate‑related device fabrication.

As a high‑solids concentrated base slurry, it offers significant flexibility for on‑site formulation. Fab engineers can dilute the stock slurry with ultra‑pure deionized water to tune abrasive loading, material removal rate and surface finishing quality for different CMP equipment and process recipes.

This slurry must be protected from strong acid contamination, sustained high‑temperature storage and freezing conditions. Such harsh conditions will destroy the colloidal stabilization system, triggering irreversible gelation, flocculation and heavy silica sediment. Once gelation occurs, the slurry can no longer be utilized for wafer polishing.

Primary application fields include ILD oxide planarization, poly‑silicon layer CMP planarization, memory chip front‑end polishing and related low‑defect semiconductor planarization workflows.

Store the material in tightly sealed original plastic containers within 5‑30℃. Avoid direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to retard bottom sediment formation.

Previous : JSYAPG-K1501) CMP Slurry Colloidal Silica for ILD & STI Oxide Planarization CAS 112926-00-8, High-Stability Water-Glass Silica Next : (JSYAPG-K30N) CMP Slurry Colloidal Silica Standard CAS 112926-00-8, Post-Metal Buffer Polish & General CMP Low Defect

Copy product links

Long by picture save/share

Add Successfully

Continue To Visit Inquiry Now

(JSYAPG-K30V) CMP Slurry Colloidal Silica High-Concentration 30%+ CAS 112926-00-8, ILD & Poly-Si Planarization Low Defect

enquiry

Add Successfully

Continue To Visit Inquiry Now

Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.