JSYAPG‑K1501 CMP slurry is a water‑glass‑derived colloidal‑silica‑based polishing suspension for semiconductor CMP processes. Spherical amorphous silica abrasives are synthesized from water‑glass raw material under tightly‑controlled particle‑growth conditions. The finished slurry exhibits outstanding colloidal stability. It is formulated for ILD inter‑layer dielectric planarization and STI shallow‑trench‑isolation oxide polishing. This CMP slurry delivers consistent oxide material removal perfo

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Product Detail Page: JSYAPG‑K1501 CMP slurry adopts water‑glass as starting raw material for colloidal silica synthesis. Strict purification steps remove heavy‑metal and ionic impurities during particle growth. Spherical amorphous silica nanoparticles are uniformly dispersed within high‑purity aqueous medium. Optimized surface‑charge stabilization restrains particle agglomeration, flocculation and sedimentation during storage and transportation, securing extended shelf‑life and consistent batch‑to‑batch performance.

In semiconductor front‑end fabrication, ILD planarization is required to flatten inter‑layer dielectric oxide films between metal wiring layers. This slurry performs balanced chemical‑mechanical material removal on oxide dielectric surfaces. It reduces surface step heights, improves wafer‑within‑wafer non‑uniformity and lays a flat foundation for subsequent photolithography procedures.

For STI oxide planarization applications, the silica abrasive achieves controlled removal of overburden oxide above shallow trench structures. It helps obtain smooth wafer topography after STI polishing, supporting subsequent transistor fabrication. Carefully controlled particle‑size distribution suppresses large coarse particles, lowering micro‑scratch risks on delicate wafer dielectric surfaces.

The slurry maintains stable rheological properties under recommended handling conditions. Semiconductor fabrication technicians may adjust working abrasive concentration via dilution with ultra‑pure deionized water to match specific polishing pressure, platen speed and targeted removal‑rate requirements on CMP tools.

Harsh operating environments must be avoided. Direct strong‑acid contamination, prolonged exposure to high temperature and freezing will break the colloidal equilibrium. Once irreversible gelation, particle flocculation and hard sediment occur, the slurry cannot be filtered or re‑processed for wafer polishing.

Major application fields include ILD inter‑layer dielectric oxide CMP, STI shallow‑trench‑isolation oxide planarization, general oxide‑layer wafer polishing for memory and logic chip manufacturing.

Store the product in original sealed plastic containers within 5‑30℃ warehouse conditions. Keep away from direct sunlight and freezing. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is strongly recommended for long‑term warehousing to mitigate bottom sediment accumulation.

Previous : (JSYAPG-PX30) Colloidal Silica Slurry High-Surface-Area 30% CAS 112926-00-8, Amorphous Silica for Catalyst, Refractory & Ceramic Next : (JSYAPG-K30V) CMP Slurry Colloidal Silica High-Concentration 30%+ CAS 112926-00-8, ILD & Poly-Si Planarization Low Defect

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JSYAPG-K1501) CMP Slurry Colloidal Silica for ILD & STI Oxide Planarization CAS 112926-00-8, High-Stability Water-Glass Silica

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.