JSYAPG‑QUART colloidal silica slurry is a high‑end semiconductor‑grade CMP polishing abrasive manufactured via sol‑gel synthesis route. It features 6N ultra‑high purity with total metal‑ion impurities controlled under 1ppm. Spherical amorphous silica nanoparticles are evenly dispersed in ultra‑pure aqueous medium. This slurry is designed for critical semiconductor chemical‑mechanical planarization workflows. It effectively suppresses metallic contamination, reduces micro‑scratches and particle‑i

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Product Detail Page: JSYAPG‑QUART colloidal silica slurry is produced by dedicated sol‑gel synthetic technology. Spherical amorphous silica nanoparticles are dispersed inside ultra‑pure aqueous system. Multi‑stage ion‑exchange purification and cross‑flow ultra‑filtration processes are adopted during production to remove ionic impurities and oversized coarse particles. Strict ICP‑MS testing is performed for each production batch to guarantee total metal‑ion content below 1ppm, achieving 6N ultra‑high‑purity specification. Optimized electrostatic surface‑charge stabilization restrains nanoparticle agglomeration and sedimentation during transportation and storage, ensuring consistent particle‑size distribution and stable polishing performance from batch to batch.

Metallic contamination represents one of the most severe risks for advanced‑node semiconductor wafer fabrication. Trace transition‑metal impurities left on wafer surfaces after CMP will introduce charge trap sites inside gate oxide layers, triggering leakage current, device drift and irreversible yield loss for logic and memory chips. By rigorous sol‑gel synthesis and successive deep purification, this slurry greatly reduces metallic contamination risk during CMP processing.

The spherical morphology of silica nanoparticles enables mild chemical‑mechanical material‑removal mechanism. It avoids deep scratching on wafer and dielectric surfaces during planarization. Controlled particle‑size distribution delivers steady removal‑rate performance for oxide layer polishing, silicon wafer finishing and intermediate dielectric planarization steps within semiconductor manufacturing.

For advanced‑node mass‑production environments, consistent slurry stability is essential to maintain stable CMP process windows. Process engineers can dilute the concentrated base slurry with ultra‑pure deionized water to adjust effective abrasive concentration. Working‑slurry properties can be tuned according to CMP equipment setup, polishing pressure and platen rotation speed to match diverse production requirements.

Strong‑acid or strong‑alkali contamination, prolonged high‑temperature storage and freezing must be strictly avoided. Harsh conditions will break colloidal stability, leading to irreversible nanoparticle flocculation, sedimentation and gelation. Once degraded, the slurry cannot be used for semiconductor CMP operations.

Major application fields include dielectric layer CMP for advanced‑node semiconductor chips, silicon wafer final polishing, epitaxial wafer planarization, low‑contamination CMP processing for logic and memory device manufacturing.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Prevent direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to slow down bottom sediment accumulation

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(JSYAPG-QUART) Colloidal Silica Slurry 6N Ultra-High-Purity CAS 112926-00-8, Sol-Gel Metal Ions <1ppm for Semiconductor CMP

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.