JSYAPG‑SS12 KOH‑based colloidal silica CMP slurry is a ready‑to‑use alkaline polishing fluid for semiconductor oxide‑film planarization. Spherical amorphous colloidal silica nanoparticles serve as the core abrasive within potassium‑hydroxide adjusted alkaline aqueous system. No further dilution is required before production deployment. This slurry realizes efficient and uniform material removal on silicon‑oxide dielectric films. It controls micro‑scratch formation and maintains excellent within‑

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Product Detail Page: JSYAPG‑SS12 ready‑to‑use CMP slurry adopts spherical amorphous colloidal silica nanoparticles dispersed in alkaline aqueous medium adjusted by KOH. Multi‑stage fine filtration is implemented during manufacturing to eliminate oversized coarse particles. Strict purification procedures reduce ionic and heavy‑metal contaminants to meet semiconductor‑grade material requirements. The alkaline pH environment is precisely stabilized to avoid pH drifting during shelf life. Electrostatic stabilization inhibits nanoparticle agglomeration and sedimentation, ensuring uniform abrasive distribution and repeatable polishing performance across production batches.

As a ready‑to‑use product, this slurry skips on‑site dilution steps inside semiconductor fabs. It eliminates process deviations caused by inaccurate manual dilution, which helps to stabilize mass‑production CMP process windows for oxide dielectric layers. The alkaline medium provides moderate chemical etching effect on silicon‑oxide surface, cooperating with mild mechanical abrasion from spherical silica particles to achieve synergistic chemical‑mechanical removal for oxide films.

Oxide‑film planarization is a fundamental procedure throughout front‑end and mid‑end semiconductor fabrication workflows. It is applicable for STI, ILD and multi‑layer inter‑metal dielectric planarization. Reliable global planarization reduces severe wafer topography variations after dielectric deposition, providing flat substrate conditions for subsequent photolithography, etching and thin‑film deposition operations. Good within‑wafer and wafer‑to‑wafer uniformity effectively lowers topography‑related defects for logic and memory chips.

Although the product is supplied ready‑to‑use, process technicians can perform minor adjustment of process parameters including polishing pressure, platen speed and slurry flow rate according to CMP tool characteristics to optimize planarization results for different wafer lots.

Strong‑acid contamination, prolonged high‑temperature storage and freezing conditions must be strictly avoided. Acid ingress will neutralize the alkaline system, destroy colloidal stability of silica nanoparticles and trigger irreversible flocculation, sedimentation and gelation. Once deteriorated, the slurry cannot be utilized for semiconductor wafer polishing.

Major application fields include STI shallow‑trench‑isolation oxide CMP, ILD inter‑layer dielectric planarization, inter‑metal oxide film polishing for logic and memory semiconductor wafers.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Prevent direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to slow down bottom sediment accumulation.

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(JSYAPG-SS12) CMP Slurry Colloidal Silica KOH-Based Ready-to-Use CAS 112926-00-8, Oxide Film Polish for Semiconductor Wafer

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.