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(JSYAPG-K30N) CMP Slurry Colloidal Silica Standard CAS 112926-00-8, Post-Metal Buffer Polish & General CMP Low Defect

JSYAPG‑K30N is a standard electronic‑grade colloidal‑silica‑based CMP slurry. Spherical amorphous silica nanoparticles are dispersed in high‑purity aqueous solution under controlled synthesis and purification procedures. This product is dedicated to post‑metal buffer polishing and various general semiconductor CMP applications. It features balanced removal efficiency and excellent surface finishing quality. The slurry can be used directly or diluted with ultra‑pure deionized water to satisfy dif

Product Detail Page: JSYAPG‑K30N standard CMP slurry is formulated with amorphous spherical colloidal silica nanoparticles homogeneously suspended in high‑purity water. Strict filtration and purification steps are executed during manufacturing to remove coarse particles and minimize residual metallic and ionic impurities. Optimized electrostatic surface stabilization prevents particle agglomeration and sedimentation within the valid shelf‑life, ensuring consistent polishing performance between different production batches.

For post‑metal buffer polishing processes after metal layer etching, residual metal debris and uneven dielectric surface topography need to be gently removed. This standard silica‑based slurry performs moderate material removal without aggressive grinding. It smoothens the wafer surface after metal processing, eliminates microscopic residues, and provides qualified buffer planarization foundation for subsequent dielectric deposition and lithography operations.

In general‑purpose semiconductor CMP workflows, the slurry is suitable for routine planarization of oxide and dielectric films. The well‑controlled particle‑size distribution reduces micro‑scratch incidents on wafer surfaces. It maintains good removal uniformity across entire wafer, helping fabs to stabilize production yield for memory and logic devices.

The slurry possesses stable rheological characteristics under recommended storage and working temperature. Process engineers can adjust the effective abrasive concentration by diluting the stock slurry with ultra‑pure deionized water, matching varied CMP equipment, polishing pressure and platen‑speed parameters.

Contamination by strong acid, prolonged high‑temperature storage and freezing must be avoided. These adverse conditions will break the colloidal equilibrium, resulting in irreversible gelation, particle flocculation and heavy sediment. Once gelled, the slurry cannot be filtered and reused for wafer polishing.

Major application fields include post‑metal buffer polishing, general dielectric‑layer CMP, intermediate planarization steps for memory chips and auxiliary wafer surface conditioning for semiconductor manufacturing.

Store in tightly‑sealed original plastic containers at 5‑30℃. Keep away from direct sunlight and freezing. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term storage to slow down bottom sediment accumulation.


(JSYAPG-K30N) CMP Slurry Colloidal Silica Standard CAS 112926-00-8, Post-Metal Buffer Polish & General CMP Low Defect
JSYAPG‑K30N is a standard electronic‑grade colloidal‑silica‑based CMP slurry. Spherical amorphous silica nanoparticles are dispersed in high‑purity aqueous solution under controlled synthesis and purification procedures. This product is dedicated to post‑metal buffer polishing and various general semiconductor CMP applications. It features balanced removal efficiency and excellent surface finishing quality. The slurry can be used directly or diluted with ultra‑pure deionized water to satisfy dif
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(JSYAPG-K30N) CMP Slurry Colloidal Silica Standard CAS 112926-00-8, Post-Metal Buffer Polish & General CMP Low Defect

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Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.


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