JSYAPG‑K1730 is an alkaline electronic‑grade colloidal‑silica‑based CMP slurry. Spherical amorphous silica nanoparticles are dispersed in high‑purity aqueous alkaline medium under tightly‑controlled synthesis and formulation conditions. The alkaline environment enhances chemical etching effect on silicon‑based oxide materials, achieving high removal‑rate planarization for oxide substrates. It can be applied directly or diluted with ultra‑pure deionized water to meet different semiconductor fab p

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Product Detail Page: JSYAPG‑K1730 alkaline CMP slurry consists of amorphous spherical colloidal silica nanoparticles homogeneously dispersed within high‑purity alkaline aqueous solution. Strict purification and multi‑stage fine‑filtration processes eliminate oversized coarse particles and lower trace metallic contaminants, conforming to electronic‑grade impurity requirements. Optimized surface‑charge stabilization maintains excellent colloidal suspension property under alkaline pH, suppressing particle agglomeration and sedimentation throughout the shelf‑life and securing consistent polishing performance batch‑to‑batch.

During oxide substrate planarization, the synergistic effect of alkaline chemical etching and mechanical abrasion from silica nanoparticles significantly boosts oxide material removal rate. The alkaline medium softens the oxide surface chemically, while spherical silica particles implement controlled mechanical grinding. This combined chemical‑mechanical action raises wafer‑processing throughput for oxide‑layer polishing operations.

Well‑managed particle‑size distribution reduces micro‑scratch risks on oxide wafer surfaces. The slurry provides favorable within‑wafer removal uniformity, which minimizes topography variation across the whole wafer after CMP treatment. Stable planarization results create reliable surface conditions for subsequent thin‑film deposition and photolithography steps.

Process engineers are allowed to dilute the stock slurry with ultra‑pure deionized water to adjust abrasive concentration and effective removal rate according to CMP tool settings, polishing pressure and platen rotation speed.

Strong acid contamination, sustained high‑temperature storage and freezing conditions must be strictly avoided. Acid ingress will neutralize the alkaline system and destroy colloidal stability, triggering irreversible gelation, flocculation and heavy silica sediment. Once gelation occurs, the slurry is no longer usable for wafer polishing.

Major application fields include high‑throughput oxide substrate planarization, thick oxide‑layer CMP, intermediate dielectric planarization for memory and logic chip manufacturing.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Protect from direct sunlight and freezing. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term warehousing to mitigate bottom sediment build‑up.

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(JSYAPG-K1730) CMP Slurry Colloidal Silica Alkaline CAS 112926-00-8, High-Removal Oxide Substrate Planarization

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.