JSYAPG‑ACU copper barrier CMP slurry is a specialized chemical‑mechanical polishing slurry designed for semiconductor backend damascene interconnect manufacturing. High‑purity inorganic abrasive is combined with proprietary complexing agents, corrosion inhibitors and pH regulators. This formulation delivers tunable polishing selectivity among copper, barrier metal and dielectric films. It achieves low‑erosion barrier‑layer planarization and minimizes recess and dishing defects on copper intercon

Product Detail

Product Detail Page: JSYAPG‑ACU copper barrier CMP slurry consists of high‑purity abrasive particles dispersed in deionized aqueous medium together with carefully balanced functional chemical additives. Multi‑stage fine filtration is implemented throughout the manufacturing workflow to eliminate oversized coarse particles which may induce scratches. Rigorous purification control reduces trace metallic impurities to meet backend semiconductor production requirements. The integrated inhibitor and complexing system is optimized to adjust relative removal rates of copper, tantalum‑based barrier and surrounding low‑k dielectric materials.

In copper damascene interconnect fabrication, barrier‑layer CMP is a critical backend processing step after bulk copper removal. Residual barrier metal must be cleared while excessive erosion of copper lines and fragile low‑k dielectric layers needs to be strictly prevented. The tunable‑selectivity characteristic allows process engineers to modify relative removal rates by adjusting slurry dilution, polishing pressure and platen speed. It effectively suppresses dishing, copper line recess and dielectric erosion defects on fine‑pitch interconnect structures.

Low‑erosion performance is essential for advanced‑node chips with narrow copper interconnects. This slurry performs mild chemical‑mechanical material removal on barrier metal without aggressive etching toward copper wiring and adjacent dielectric. It maintains intact topography of the patterned metal lines, which helps secure electrical performance and long‑term reliability of multi‑layer interconnect networks inside logic and memory devices.

On‑site dilution with ultra‑pure deionized water is permitted for production. Fab technicians can fine‑tune abrasive concentration and effective chemical activity to match different CMP tool platforms and targeted process windows.

The slurry shall be protected from strong alkaline or strong‑acid contamination, sustained over‑heating and freezing storage. Harsh conditions will break the balance of corrosion‑inhibitor and complexing additive system, triggering particle flocculation, sedimentation or irreversible gelation. Once deteriorated, the slurry cannot be recovered for wafer polishing.

Major application fields include copper barrier‑layer CMP for damascene interconnect, backend planarization for logic IC and memory chips, low‑k dielectric compatible barrier polishing for advanced‑node semiconductor manufacturing.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Avoid direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term warehousing to reduce bottom sediment accumulation.

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(JSYAPG-ACU) CMP Slurry Copper Barrier for Damascene Interconnect, Tunable Selectivity Low-Erosion Barrier Polish

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.