JSYAPG‑NOVA advanced‑node CMP slurry is a high‑performance chemical‑mechanical polishing slurry targeted for fine‑node semiconductor fabrication. High‑purity controlled‑size colloidal silica serves as core abrasive, compounded with carefully balanced functional additives. This slurry supports multi‑sequential CMP planarization workflows for logic and memory wafers. It minimizes micro‑scratches, residual particles and topographical defects. The stock slurry can be diluted with ultra‑pure deionize

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Product Detail Page: JSYAPG‑NOVA advanced‑node CMP slurry is composed of high‑purity spherical colloidal silica nanoparticles uniformly dispersed in ultra‑pure aqueous medium, combined with specialized surface‑modulating additives. Multi‑level microfiltration is implemented during production to eliminate oversized coarse particles. Strict purification procedures reduce ionic and heavy‑metal contaminants, complying with strict material specifications for advanced‑node wafer processing. Optimized colloidal stabilization inhibits particle agglomeration and sedimentation, delivering consistent polishing results across different production batches.

For advanced‑node logic and memory chip manufacturing, successive multi‑step CMP operations are executed throughout front‑end and backend workflows. Repeated planarization of dielectric, poly‑silicon, barrier and metal layers places extremely high demands on slurry consistency and low‑defect performance. This slurry is formulated to maintain stable removal behavior across different planarization stages. It helps to control within‑wafer and wafer‑to‑wafer non‑uniformity during continuous mass production.

Low‑defect polishing performance is critical for fine‑feature circuits. Micro‑scratches, embedded abrasive residues and local dishing defects may cause circuit leakage or yield loss on miniaturized chip structures. The spherical abrasive morphology together with optimized additive system mitigates scratch formation and reduces residual particle contamination after post‑CMP wafer cleaning. Stable planar topography creates reliable surface conditions for subsequent deposition, etching and photolithography steps.

On‑site dilution with ultra‑pure deionized water allows process engineers to adjust abrasive concentration. The working formulation can be tuned to fit varied CMP equipment, polishing pressure and platen speed for different sequential planarization steps.

Strong‑acid or strong‑alkali contamination, prolonged high‑temperature storage and freezing must be strictly avoided. These harsh conditions will disrupt the synergistic balance between abrasive particles and functional additives, leading to irreversible flocculation, sedimentation and gelation. Deteriorated slurry cannot be recovered for wafer processing.

Major application fields include multi‑step CMP planarization for advanced‑node logic chips, high‑density memory wafer polishing, mixed dielectric‑metal layer planarization, and low‑defect finishing for high‑performance semiconductor devices.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Prevent direct sunlight and freezing. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to slow down bottom sediment accumulation.

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(JSYAPG-NOVA) CMP Slurry Advanced-Node for Logic & Memory Chip Multi-Step Planarization, Low-Defect Wafer Polish

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.