JSYAPG‑OPTI oxide CMP slurry is a functional chemical‑mechanical polishing slurry developed for semiconductor FEOL manufacturing processes. Spherical high‑purity colloidal silica acts as the core abrasive, matched with tailored chemical additives. This slurry realizes tunable removal selectivity between silicon‑oxide and poly‑silicon films. It delivers low‑defect planarization performance for front‑end wafer processing. The stock slurry can be diluted or adjusted according to fab process require

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Product Detail Page: JSYAPG‑OPTI oxide CMP slurry adopts high‑purity spherical colloidal silica as the main abrasive, dispersed inside high‑purity aqueous medium together with proprietary regulating additives. Multi‑stage fine filtration removes oversized coarse particles during production, effectively cutting down scratch‑inducing impurities. Strict raw‑material purification minimizes residual metal‑ion contamination to satisfy rigorous front‑end semiconductor manufacturing specifications. Optimized colloidal stabilization suppresses particle agglomeration and sedimentation, guaranteeing stable polishing performance across different production batches.

In FEOL (Front‑End‑of‑Line) fabrication workflows, precise planarization of oxide and poly‑silicon layers is critical for transistor formation. The specially designed additive system enables tunable polishing selectivity between oxide dielectric and poly‑silicon. Process technicians can adjust working concentration and polishing parameters to modify relative removal rates of these two materials. It prevents excessive over‑polishing of poly‑silicon structures while efficiently removing excess oxide layers.

When executing poly‑silicon planarization, mild mechanical abrasion combined with controlled chemical etching reduces micro‑scratches, surface pits and residual particle contamination on the wafer surface. Excellent within‑wafer uniformity stabilizes local wafer topography after CMP, establishing a qualified foundation for subsequent gate fabrication and photolithography steps.

This slurry supports on‑site dilution with ultra‑pure deionized water. Semiconductor process engineers can adjust abrasive loading and effective selectivity to adapt to different CMP equipment, polishing pressure and platen speed conditions.

Avoid harsh handling conditions including strong‑acid contamination, prolonged high‑temperature storage and freezing. Such adverse conditions will destroy the balance between abrasive particles and functional additives, resulting in irreversible gelation, flocculation and heavy sediment. Gelled slurry cannot be reused for wafer polishing operations.

Major application fields cover FEOL front‑end transistor‑related planarization, poly‑silicon layer CMP, shallow trench isolation auxiliary polishing, and low‑defect wafer processing for logic and memory chip production.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Prevent direct sunlight and freezing. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to slow down bottom sediment accumulation.

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(JSYAPG-OPTI) CMP Slurry Oxide for FEOL & Poly-Si Chemical Mechanical Polishing, Tunable Selectivity Low-Defect Wafer

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.