JSYAPG‑HDKI13 semiconductor‑grade fumed silica CMP abrasive is produced by high‑temperature flame pyrolysis process. It is subjected to deep purification and rigorous coarse‑particle removal treatment. This product possesses ultra‑low metallic impurity and extremely low coarse‑particle content. It is designed as key raw abrasive for manufacturing semiconductor CMP polishing slurries. It helps to reduce micro‑scratch defects on wafer surfaces and satisfies strict material requirements for advance

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Product Detail Page: JSYAPG‑HDKI13 fumed silica is synthesized through continuous high‑temperature flame pyrolysis. After synthesis, the powder goes through multiple dedicated purification, classification and air‑jet sifting procedures. Strict removal of oversized hard agglomerates is executed to achieve low‑coarse‑particle specification. Metallic trace impurities are deeply reduced during post‑treatment. Each production batch is tested via ICP‑MS and particle‑counting inspection to guarantee consistent quality for semiconductor‑oriented usage.

Metallic contamination and coarse hard agglomerates are two primary sources of critical defects during semiconductor CMP processing. Residual transition‑metal contaminants on wafer surfaces can act as charge trap sites inside gate oxide layers, causing leakage current, device drift and decreased chip yield. Coarse silica agglomerates generate micro‑scratches across dielectric and silicon wafer surfaces. These scratches may propagate in subsequent photolithography, etching and deposition steps, resulting in permanent functional failure for advanced‑node logic and memory chips.

This semiconductor‑grade fumed silica provides controlled primary particle size and narrow aggregate distribution. The particle surface maintains proper silanol groups to facilitate homogeneous dispersion within aqueous slurry systems during slurry compounding. Excellent dispersibility lowers the tendency to re‑form hard agglomerates after liquid‑phase mixing. With ultra‑low‑metal characteristics, this abrasive minimizes the risk of ionic and metallic residues left on wafer surfaces after CMP planarization. It is intended for customer‑side formulation into oxide CMP slurries used for STI, ILD and inter‑metal dielectric planarization processes.

During slurry preparation, technical personnel can adjust solid loading, pH condition and dispersant formulation according to target CMP process requirements. Proper high‑shear mixing and filtration steps are strongly recommended after wet dispersion to eliminate secondary agglomerates before the slurry is fed into semiconductor CMP equipment.

The powder must be protected against moisture absorption and external contamination. High‑humidity storage environment should be avoided. Moisture uptake will trigger hard particle agglomeration and degrade the low‑coarse specification, which will induce scratching risk in final wafer polishing applications.

Major application fields include raw abrasive for advanced‑node oxide CMP slurry, formulation of STI and ILD dielectric polishing slurries, high‑purity abrasive material for semiconductor wafer planarization.

Store the product in tightly sealed moisture‑proof drums within 5‑30℃. Keep away from direct sunlight and humid atmosphere. For long‑term stored batches, sifting inspection is suggested prior to slurry compounding.

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(JSYAPG-HDKI13) Fumed Silica CMP Abrasive Semiconductor-Grade CAS 112945-52-5, Ultra-Low Metal Low-Coarse Scratch-Free

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.