JSYAPG‑IDIE L fumed silica CMP slurry is a high‑purity dielectric‑oriented polishing slurry targeted for advanced‑node semiconductor manufacturing. Flame‑synthesized fumed silica acts as the core abrasive, dispersed in ultra‑pure aqueous medium with customized pH regulators and surface‑modifying additives. This product is designed for ILD inter‑layer dielectric planarization between multi‑layer metal interconnects. It maintains controllable oxide removal rate, reduces micro‑scratch risk and impr

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Product Detail Page: JSYAPG‑IDIE L CMP slurry adopts high‑purity fumed silica abrasive produced by flame pyrolysis technology, uniformly dispersed in ultra‑pure aqueous system. Multi‑stage classification and fine filtration are performed during production to eliminate oversized abrasive aggregates. Strict purification procedures are implemented to control heavy‑metal and ionic impurities, fulfilling the rigorous material specifications for advanced‑node wafer processing. Optimized suspension stabilizers suppress rapid sedimentation of fumed‑silica particles during storage and transportation, ensuring consistent removal‑rate performance from batch to batch.

In advanced‑node semiconductor chips, multiple stacked metal interconnect tiers are separated by ILD inter‑layer dielectric films. Significant step‑height topography is generated on the wafer surface after dielectric deposition. Without sufficient ILD planarization, severe topography variation will degrade the resolution of subsequent photolithography processes, causing pattern distortion and yield loss for logic and memory devices. This slurry performs synergistic chemical‑mechanical material removal on silicon‑based ILD dielectric layers, effectively eliminating step heights after thin‑film deposition.

The tailored additive system balances mechanical cutting power from fumed‑silica abrasive with mild chemical etching on oxide surfaces. It achieves reliable global planarization while restraining the occurrence of micro‑scratches on fragile dielectric surfaces. Excellent within‑wafer thickness uniformity helps stabilize the dielectric thickness across the whole wafer, which is critical for consistent electrical insulation between dense multi‑level metal interconnects in FinFET and GAA‑based advanced chips.

Process engineers can dilute the concentrated stock slurry with ultra‑pure deionized water to adjust effective abrasive loading. Polishing results can be further optimized by tuning CMP process parameters including polishing down‑force, platen rotating speed and slurry flow rate according to different wafer fabrication requirements.

Strong‑acid or strong‑alkali contamination, prolonged high‑temperature storage and freezing conditions must be strictly avoided. Foreign chemical impurities will destroy the suspension stability of fumed‑silica particles and trigger irreversible hard sedimentation and agglomeration. Once deteriorated, the slurry cannot be used for semiconductor ILD planarization.

Major application fields include ILD inter‑layer dielectric CMP for advanced‑node logic chips, multi‑layer inter‑metal dielectric planarization, dielectric polishing for high‑density memory wafer manufacturing.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Prevent direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to reduce hard bottom sediment.

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(JSYAPG-IDIE L) CMP Slurry Fumed Silica for ILD Interlayer Dielectric Planarization CAS 112945-52-5, High-Purity Advanced Node

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.