JSYAPG‑NOVUS multi‑metal CMP slurry is a dedicated aqueous polishing slurry designed for advanced‑node semiconductor metal interconnect fabrication. High‑purity inorganic abrasive is combined with proprietary oxidizing agents, metal‑specific complexing agents and selective corrosion inhibitors. This slurry realizes controlled planarization for molybdenum, cobalt and aluminum interconnect films. It delivers high polishing selectivity between target metal, barrier material and surrounding low‑k di

Product Detail

Product Detail Page: JSYAPG‑NOVUS CMP slurry consists of high‑purity inorganic abrasive uniformly dispersed in ultra‑pure aqueous medium, integrated with carefully calibrated oxidants, multi‑metal chelating components and selective anti‑corrosion additives. Multi‑stage precision filtration is executed throughout manufacturing to eliminate oversized abrasive agglomerates that may generate scratches on delicate low‑k dielectric surfaces. Rigorous purification workflow restricts ionic and heavy‑metal contamination to satisfy strict material specifications for advanced‑node semiconductor production. The tailored additive system adjusts oxidation and dissolution kinetics individually for molybdenum, cobalt and aluminum, achieving tunable removal rates and high selectivity versus adjacent dielectric materials.

At advanced semiconductor process nodes, molybdenum, cobalt and aluminum are widely adopted for local interconnects, contact metallization and intermediate wiring structures. After metal film deposition, excess metal material on the dielectric surface must be removed by CMP. Insufficient polishing selectivity will cause severe metal dishing and recess on fine‑pitch interconnect lines. Such defects increase line resistance, aggravate electromigration risk and introduce signal delay, which directly reduces device reliability and final production yield. Additionally, excessive chemical attack on fragile low‑k dielectric may induce micro‑cracks and metal diffusion failure inside the interconnect stack.

This slurry preferentially removes surplus molybdenum, cobalt and aluminum while limiting unwanted material loss of low‑k dielectric and barrier layers. It effectively mitigates dishing, line recess and surface scratching on dense, fine‑pitch metal wiring. The resulting clean, smooth wafer surface lowers particle‑related defect counts and reduces the cleaning burden for subsequent post‑CMP wafer treatment. It provides qualified planar substrate conditions for successive dielectric deposition and photolithography processes.

Semiconductor process engineers may dilute the concentrated stock slurry with ultra‑pure deionized water to modify effective abrasive and additive concentration. Polishing performance can be further optimized by adjusting polishing down‑force, platen rotation speed and slurry flow rate according to different CMP equipment platforms and mass‑production process windows.

Strong‑acid or strong‑alkali contamination, prolonged high‑temperature storage and freezing conditions must be strictly avoided. Undesired foreign contaminants will break the delicate chemical balance of oxidants, chelating agents and inhibitors, leading to particle flocculation, sedimentation and irreversible slurry degradation. Degraded slurry cannot be utilized for advanced‑node metal interconnect polishing.

Major application fields include local interconnect CMP for advanced‑node logic devices, molybdenum‑cobalt‑aluminum contact layer planarization, fine‑pitch metal wiring polishing for high‑performance semiconductor chips.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Prevent direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to mitigate bottom sediment accumulation.

Previous : (JSYAPG-IDIE L) CMP Slurry Fumed Silica for ILD Interlayer Dielectric Planarization CAS 112945-52-5, High-Purity Advanced Node Next : (JSYAPG-SP1000) CMP Slurry Sapphire Nano-Abrasive for Sapphire C/A-Face LED Substrate, Ra 0.7–1nm Low Defect

Copy product links

Long by picture save/share

Add Successfully

Continue To Visit Inquiry Now

(JSYAPG-NOVUS) CMP Slurry Molybdenum/Cobalt/Aluminum, High-Selectivity Metal Interconnect Polish for Advanced Node

enquiry

Add Successfully

Continue To Visit Inquiry Now

Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.