JSYAPG‑PL4000 oxide‑film CMP slurry is a semiconductor‑grade chemical‑mechanical polishing slurry adopting high‑purity spherical colloidal silica as core abrasive. It is formulated for ILD inter‑layer dielectric planarization, STI shallow trench isolation processing and multi‑layer interconnect wafer planarization. With strictly controlled particle‑size distribution and low ionic‑impurity level, this slurry realizes balanced oxide removal rate and superior global planarization capability. The co

Product Detail

Product Detail Page: JSYAPG‑PL4000 CMP slurry consists of high‑purity spherical colloidal silica nanoparticles uniformly dispersed in ultra‑pure aqueous medium. Multi‑stage fine filtration is implemented during the whole production procedure to eliminate oversized coarse particles which would trigger micro‑scratches on wafer surfaces. Rigorous purification workflow minimizes residual heavy‑metal and ionic contaminants, meeting strict material specifications for semiconductor front‑end and mid‑end manufacturing. Optimized electrostatic stabilization restrains nanoparticle agglomeration and sedimentation during storage and transportation, ensuring consistent polishing performance between different production batches.

In ILD inter‑layer dielectric planarization processes, this slurry removes excess silicon‑oxide dielectric material and reduces severe topographic steps formed after thin‑film deposition. Effective planarization of dielectric layers provides flat wafer substrates, which is essential for high‑resolution photolithography and subsequent multi‑layer metal interconnect deposition.

For STI shallow‑trench‑isolation applications, controlled material removal on overburden oxide above trench structures helps to form reliable isolation regions between adjacent transistor devices. It prevents electrical leakage across transistors and stabilizes the basic electrical performance of semiconductor chips.

During multi‑layer interconnect fabrication, repeated oxide‑layer planarization is required between successive metal wiring tiers. This slurry maintains steady removal uniformity across the wafer, minimizing within‑wafer topography fluctuation in complex multi‑stack chip structures. It supports stable yield for mass‑production of logic and memory devices.

Process engineers can dilute the original concentrated slurry with ultra‑pure deionized water to adjust abrasive concentration. The working formulation can be optimized according to CMP equipment parameters, polishing pressure and platen rotating speed for different production recipes.

Strong‑acid contamination, long‑time high‑temperature storage and freezing conditions must be strictly avoided. These harsh surroundings will destroy the colloidal stability of silica nanoparticles and cause irreversible flocculation, sedimentation and gelation. Once deteriorated, the slurry cannot be filtered and reused for wafer polishing.

Major application fields include ILD inter‑layer dielectric CMP planarization, STI shallow trench isolation polishing, multi‑layer interconnect dielectric planarization for logic IC and memory wafer manufacturing.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Keep away from direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to slow down bottom sediment accumulation.

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(JSYAPG-PL4000) CMP Slurry Oxide Film for ILD/STI & Multi-Layer Interconnect Wafer Planarization, High-Purity Colloidal Silica

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.