JSYAPG‑SP1000 sapphire CMP slurry is a high‑precision final‑stage polishing fluid dedicated to sapphire LED substrates. Well‑classified nano‑sized inorganic abrasive particles are dispersed in ultra‑pure aqueous medium with customized pH regulators and lubricating surface additives. This slurry targets C‑face and A‑face sapphire wafers for LED epitaxy. It removes residual lapping traces and subsurface micro‑damage, achieving fine surface roughness within Ra 0.7‑1nm while minimizing scratch defec

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Product Detail Page: JSYAPG‑SP1000 sapphire CMP slurry adopts strictly graded nano‑abrasive as core functional component, homogeneously suspended inside ultra‑pure aqueous solution. Multi‑stage fine filtration and particle classification processes are implemented during production to eliminate oversized abrasive agglomerates that would induce visible scratches on sapphire crystal surfaces. Raw‑material purification controls foreign ionic and heavy‑metal contaminants to avoid crystal surface staining. Optimized suspension and lubricating additives reduce friction heat generated at the contact zone between polishing pad and hard sapphire substrate during high‑speed planarization, restraining thermally induced micro‑cracks on the crystal lattice.

Sapphire C‑face and A‑face substrates serve as critical epitaxy templates for blue and green LED chip manufacturing. After rough lapping, the sapphire wafer still retains subsurface micro‑cracks, dislocation layers and grinding traces. If these residual damages are not completely eliminated by final CMP, the crystal defects will propagate into the subsequent GaN epitaxial layer during MOCVD growth. This situation will increase non‑radiative recombination inside LED chips, lower luminous efficiency and reduce finished‑device yield.

This slurry performs synergistic chemical‑mechanical removal on hard sapphire crystal. Moderate chemical surface softening cooperates with gentle mechanical grinding from nano‑abrasives to gradually clear damaged crystal layers left by previous lapping processes. It consistently delivers epi‑ready wafer surfaces with surface roughness controlled at Ra 0.7‑1nm. Excellent planarization uniformity across the whole wafer guarantees stable epitaxial growth conditions for mass‑production LED wafers.

Process technicians can dilute the concentrated stock slurry with ultra‑pure deionized water to adjust effective abrasive loading. Polishing results can be further optimized by tuning process parameters including polishing down‑force, platen rotating speed and slurry flow rate according to different sapphire polishing equipment.

Foreign chemical contamination, prolonged high‑temperature storage and freezing must be strictly avoided. Freezing will destroy the dispersion state of nano‑abrasive particles and trigger irreversible hard sedimentation. Once sedimentation cannot be re‑dispersed by agitation, the slurry is no longer qualified for precision sapphire finishing.

Major application fields include final CMP polishing for C‑face and A‑face sapphire LED substrates, epi‑ready surface preparation for optoelectronic crystal wafers, ultra‑fine finishing of optical sapphire components.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Prevent direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to mitigate bottom sediment accumulation.

Previous : (JSYAPG-NOVUS) CMP Slurry Molybdenum/Cobalt/Aluminum, High-Selectivity Metal Interconnect Polish for Advanced Node Next : (JSYAPG-SP3000) Sapphire Lapping Slurry High Removal Rate 20–25µm/hr for Sapphire C/A/R-Face, Low Sub-Surface Damage

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(JSYAPG-SP1000) CMP Slurry Sapphire Nano-Abrasive for Sapphire C/A-Face LED Substrate, Ra 0.7–1nm Low Defect

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.