JSYAPG‑PL5000 tungsten CMP slurry is a dedicated chemical‑mechanical polishing slurry for semiconductor tungsten‑based structures. It adopts high‑purity inorganic abrasive together with optimized oxidizing agents, complexing agents and corrosion inhibitors. This slurry achieves efficient removal of over‑deposited tungsten for tungsten plug formation and memory word‑line contact processing. It suppresses dishing and erosion defects on tiny tungsten features. The concentrated base slurry can be di

Product Detail

Product Detail Page: JSYAPG‑PL5000 tungsten CMP slurry is composed of high‑purity abrasive particles dispersed in ultra‑pure aqueous medium, integrated with carefully balanced oxidant, metal complexing components and anti‑corrosion additives. Multi‑stage precision filtration removes oversized coarse particles during manufacturing, lowering scratch risk on wafer surfaces. Strict purification control limits ionic and heavy‑metal impurities to satisfy backend semiconductor material requirements. The integrated additive system regulates tungsten oxidation and dissolution kinetics to realize controlled high‑speed material removal.

Tungsten plug fabrication is a critical intermediate‑stage process for semiconductor devices. After tungsten deposition inside contact vias, excess tungsten on the dielectric surface must be removed by CMP. This slurry efficiently clears surplus tungsten while minimizing dishing within small‑size contact plugs. Stable planar topography ensures reliable vertical electrical connection between upper and lower circuit layers.

For memory word‑line contact applications, consistent polishing performance across dense and isolated feature regions is essential. Non‑uniform material removal may induce resistance deviation on memory word‑lines, resulting in unstable signal transmission and reduced device yield. This slurry balances mechanical abrasion and chemical etching, keeping local feature erosion under tight control for high‑density memory chip structures.

Process engineers may perform on‑site dilution using ultra‑pure deionized water to adjust effective abrasive and oxidant concentration. The working slurry can be tuned for different CMP platforms, polishing pressure and platen speed to meet mass‑production process windows.

The slurry must be protected from severe acid‑base contamination, prolonged high‑temperature storage and freezing. Harsh conditions will break the delicate chemical balance among oxidants, inhibitors and abrasive particles. It will trigger particle flocculation, sedimentation and irreversible slurry deterioration, and the degraded slurry cannot be applied for wafer polishing.

Major application fields include tungsten plug CMP for logic chips, memory word‑line contact planarization, intermediate metal‑contact layer polishing for storage semiconductor devices.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Avoid direct sunlight and freezing. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term warehousing to mitigate bottom sediment accumulation.

Previous : (JSYAPG-PL4000) CMP Slurry Oxide Film for ILD/STI & Multi-Layer Interconnect Wafer Planarization, High-Purity Colloidal Silica Next : (JSYAPG-PL6000) CMP Slurry Poly-Silicon for Poly-Si Gate & Post-POP Gate Process, High-Purity Low-Defect Wafer

Copy product links

Long by picture save/share

Add Successfully

Continue To Visit Inquiry Now

(JSYAPG-PL5000) CMP Slurry Tungsten (W) for Tungsten Plug & Memory Word-Line Contact, High Removal Rate Low Defect

enquiry

Add Successfully

Continue To Visit Inquiry Now

Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.