JSYAPG‑PL6000 poly‑silicon CMP slurry is a front‑end semiconductor‑grade chemical‑mechanical polishing slurry. High‑purity spherical colloidal silica serves as the core abrasive, combined with tailored pH regulators and surface‑modulating additives. This slurry is designed for poly‑silicon gate planarization and Post‑POP gate sequential processing. It provides controlled poly‑silicon removal rate and minimizes micro‑scratches, dishing and surface residual particles. The concentrated base slurry

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Product Detail Page: JSYAPG‑PL6000 poly‑silicon CMP slurry consists of high‑purity spherical colloidal silica nanoparticles homogeneously suspended in ultra‑pure aqueous medium. Multi‑stage fine filtration is carried out throughout production to eliminate oversized coarse particles that may create scratches on sensitive poly‑silicon wafer surfaces. Rigorous raw‑material purification reduces ionic contamination and heavy‑metal residues to satisfy strict specifications for transistor front‑end fabrication. Optimized colloidal surface‑charge stabilization suppresses nanoparticle agglomeration and sedimentation, ensuring stable polishing performance batch‑to‑batch.

In poly‑silicon gate manufacturing, wafer topography directly impacts transistor threshold voltage and device consistency. After poly‑silicon thin‑film deposition, CMP planarization removes surface protrusions and uneven peaks. The slurry delivers mild yet effective chemical‑mechanical removal action, generating a smooth poly‑silicon surface and laying a qualified foundation for subsequent gate patterning and etching operations.

For the Post‑POP gate process, precise planarization is required after the POP‑related deposition step. Local over‑polishing must be strictly controlled to avoid damage to delicate gate structures. This slurry maintains uniform removal performance across dense and isolated poly‑silicon feature zones. It reduces topography fluctuation on gate regions, which is critical for stabilizing electrical parameters of mass‑produced transistors on logic and memory chips.

Process engineers can dilute the stock slurry with ultra‑pure deionized water to adjust abrasive concentration. Working slurry parameters can be tuned according to CMP equipment settings, polishing pressure and platen rotation speed to fit different production process windows.

Strong‑acid or strong‑alkali contamination, prolonged high‑temperature storage and freezing conditions should be strictly avoided. Harsh environmental conditions will break the balance between silica abrasive and functional additives, triggering irreversible particle flocculation, sedimentation and gelation. Deteriorated slurry cannot be reused for wafer polishing.

Major application fields include poly‑silicon gate planarization, Post‑POP gate process CMP, front‑end low‑defect planarization for logic and memory semiconductor wafers.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Prevent direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to slow down bottom sediment accumulation.

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(JSYAPG-PL6000) CMP Slurry Poly-Silicon for Poly-Si Gate & Post-POP Gate Process, High-Purity Low-Defect Wafer

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.