JSYAPG‑PL6500 CMP cleaning slurry is a dedicated post‑CMP surface‑treatment cleaning medium for poly‑silicon wafer films. Formulated with high‑purity dispersing components, chelating agents and surface‑active additives in ultra‑pure aqueous base, this product targets abrasive residues, metallic contaminants and micro‑particles remaining on poly‑Si surfaces after poly‑silicon CMP. It releases adsorbed particles from wafer substrate and inhibits particle re‑deposition, achieving defect‑reduction w

Product Detail

Product Detail Page: JSYAPG‑PL6500 post‑polish cleaning slurry is prepared in ultra‑pure aqueous system, incorporating high‑efficiency chelating agents, non‑ionic surfactants and anti‑redeposition additives. Raw materials undergo strict purification to minimize ionic and heavy‑metal impurities, complying with front‑end semiconductor manufacturing requirements. The formula is optimized to maintain appropriate surface tension, facilitating desorption of tiny residual silica abrasive fragments and fine debris that adhere tightly to poly‑silicon film after CMP planarization.

After poly‑silicon gate CMP process, micro‑abrasive particles, metallic trace contaminants and polishing by‑products tend to remain on the wafer surface and within tiny surface trenches. If these residues are not thoroughly eliminated, they will generate particle‑induced defects, cause gate‑oxide contamination, and trigger transistor leakage, which seriously lowers final chip production yield.

This cleaning slurry works through dual mechanism: surfactant weakens the physical adsorption force between residual particles and poly‑silicon surface, while chelating components complex with trace metallic impurities to dissolve metal‑based contaminants. Meanwhile, anti‑redeposition ingredients keep detached fine particles stably suspended inside the cleaning liquid, preventing those freed debris from re‑attaching back onto the wafer surface during wafer rinsing and scrubbing operations.

It is applicable for both brush scrub cleaning and megasonic cleaning equipment inside semiconductor fabs. Process engineers can dilute the concentrated cleaning slurry with ultra‑pure deionized water to adjust working concentration, adapting to different cleaning temperature, processing duration and mechanical scrub intensity for poly‑silicon wafer post‑CMP workflows.

Contamination by foreign waste chemicals, sustained high‑temperature storage and freezing should be strictly avoided. Freezing will destroy surfactant molecular structure and result in phase separation. Once phase separation occurs, the cleaning performance cannot be restored and the slurry is no longer usable for wafer processing.

Major application fields include post‑CMP cleaning for poly‑silicon gate film, particle removal after front‑end poly‑Si planarization, defect‑reduction surface conditioning for logic and memory semiconductor wafers.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Avoid direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to prevent component stratification.

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(JSYAPG-PL6500) CMP Cleaning Slurry Post-Polish Particle Removal for Poly-Si Film, Defect Reduction Wafer Clean

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.