JSYAPG‑PL7000 copper CMP slurry is a backend‑grade chemical‑mechanical polishing slurry dedicated to copper damascene interconnect processes. Ultra‑high‑purity colloidal silica acts as the core abrasive, combined with carefully selected oxidizing agents, copper corrosion inhibitors and metal‑chelating additives. This slurry realizes efficient removal of over‑deposited copper layers while suppressing line erosion, dishing and residual particle contamination on fine copper wiring. The concentrated

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Product Detail Page: JSYAPG‑PL7000 copper CMP slurry is formulated with ultra‑high‑purity spherical colloidal silica abrasive uniformly dispersed within ultra‑pure aqueous medium. Multi‑stage precision filtration is implemented during production to remove oversized coarse abrasive particles which would induce scratches on delicate copper interconnect structures. Strict raw‑material purification effectively minimizes trace heavy‑metal and ionic impurities to satisfy stringent material requirements for advanced‑node backend wafer fabrication. The synergistic additive system precisely controls copper oxidation rate and surface corrosion behavior to balance mechanical abrasion and chemical etching.

In copper damascene interconnect manufacturing, excess copper deposited above dielectric trenches must be completely eliminated by bulk copper CMP. Narrow fine‑pitch copper lines are extremely vulnerable to dishing, recess and lateral erosion. Severe erosion defects will reduce the effective cross‑section of copper interconnects, increase circuit resistance and degrade long‑term electromigration reliability of logic and memory chips. This slurry delivers controlled chemical‑mechanical removal action, restraining over‑etching along copper line edges and preserving the integrity of patterned copper wiring.

Low‑residue performance is another critical advantage of this product. Optimized surface‑active components help polishing by‑products and fine abrasive fragments stay suspended in the slurry medium, reducing the risk of hard particle residues left on wafer surfaces after polishing. It lessens the burden for subsequent post‑CMP wafer cleaning processes and helps lower overall backend defect rates.

Semiconductor process engineers can dilute the concentrated stock slurry with ultra‑pure deionized water to adjust effective abrasive and chemical additive concentration. The working liquid can be tuned for different CMP equipment, polishing pressure and platen speed according to mass‑production process windows.

Strong‑acid or strong‑alkali contamination, prolonged high‑temperature storage and freezing must be strictly avoided. These unfavorable conditions will destroy the coordination balance among oxidants, corrosion inhibitors and silica abrasive, resulting in particle flocculation, sedimentation and irreversible slurry degradation. Degraded slurry cannot be adopted for wafer polishing operations.

Major application fields include bulk copper CMP for damascene interconnect, backend planarization for logic IC and memory chips, low‑erosion polishing for fine‑pitch copper wiring on advanced‑node semiconductor wafers.

Store the product in tightly‑sealed original plastic containers within 5‑30℃. Prevent direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to mitigate bottom sediment accumulation.

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(JSYAPG-PL7000) CMP Slurry Copper (Cu) for Copper Damascene Interconnect, Ultra-High-Purity Silica Low Erosion Low Residue

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.