(JSYAPG-PL8000) CMP Slurry Barrier Layer for Post-Copper Polish, High Selectivity Low-Erosion Barrier Planarization
JSYAPG‑PL8000 barrier‑layer CMP slurry is a specialized backend‑semiconductor‑grade polishing slurry developed for post‑copper barrier planarization. High‑purity inorganic abrasive is combined with proprietary oxidants, chelating agents and corrosion‑suppressing additives. This slurry removes residual tantalum‑based barrier material after bulk copper polishing. It maintains high polishing selectivity between barrier metal, copper lines and surrounding low‑k dielectric, minimizing copper line rec
Product Detail Page: JSYAPG‑PL8000 barrier‑layer CMP slurry consists of high‑purity abrasive particles homogeneously dispersed in ultra‑pure aqueous medium, together with a precisely balanced system of oxidizing agents, metal chelators and corrosion inhibitors. Multi‑stage precision filtration is performed during manufacturing to eliminate oversized coarse particles that may scratch fragile low‑k dielectric films and fine copper interconnects. Rigorous purification controls trace ionic and heavy‑metal impurities to satisfy strict material specifications for advanced‑node backend semiconductor fabrication. The tailored additive system modulates chemical reaction rates for different materials to achieve the targeted high polishing selectivity.
Following bulk copper removal in damascene interconnect workflows, thin residual tantalum‑based barrier layers remain on the dielectric surface. These residual barrier films must be cleared completely without damaging the embedded copper lines and adjacent low‑k dielectric materials. Excessive erosion of copper will reduce the cross‑section of metal interconnects and raise electrical resistance. Meanwhile, over‑attack on low‑k dielectric can introduce micro‑cracks, which causes reliability failures such as metal diffusion and circuit leakage.
This barrier‑layer slurry is formulated to preferentially remove tantalum‑containing barrier residues. It suppresses chemical corrosion on copper wiring and minimizes material loss of low‑k dielectrics. Stable planar topography after barrier CMP provides qualified wafer surface conditions for subsequent dielectric deposition and further multi‑layer backend processing. It helps reduce dishing, recess and dielectric‑damaged defects for high‑density fine‑pitch interconnect structures on logic and memory chips.
Process engineers can dilute the concentrated stock slurry with ultra‑pure deionized water to adjust effective abrasive and additive concentration. The working slurry performance can be fine‑tuned according to CMP equipment platforms, polishing pressure and platen speed to fit varied mass‑production process windows.
Strong‑acid or strong‑alkali contamination, prolonged high‑temperature storage and freezing conditions must be strictly avoided. Harsh conditions will disrupt the synergistic balance of oxidants, corrosion inhibitors and abrasive particles, triggering irreversible particle flocculation, sedimentation and slurry deterioration. Degraded slurry cannot be utilized for wafer polishing.
Major application fields include post‑copper barrier‑layer CMP for copper damascene interconnect, backend planarization for advanced‑node logic and memory chips, low‑k dielectric compatible barrier polishing for fine‑pitch interconnect structures.
Store the product in tightly‑sealed original plastic containers within 5‑30℃. Avoid direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to mitigate bottom sediment accumulation.
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(JSYAPG-PL8000) CMP Slurry Barrier Layer for Post-Copper Polish, High Selectivity Low-Erosion Barrier Planarization
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Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.
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