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(JSYAPG-S003) CMP Slurry Wafer Colloidal Silica Ultra-High-Purity Metal Ions <1ppb, for Silicon & Compound Wafer Planarization

JSYAPG‑S003 ultra‑high‑purity wafer CMP slurry adopts monodispersed spherical colloidal silica nano‑abrasives formulated in high‑grade deionized water. Strict purification technology guarantees total metal‑ion content below 1ppb. It is supplemented with optimized pH regulators and specialized dispersing additives under clean‑room production conditions. This CMP slurry is developed for planarization of silicon wafers and various compound semiconductor wafers. It realizes balanced chemical etching

Product Detail Page: JSYAPG‑S003 CMP slurry is synthesized and manufactured inside controlled clean‑room facilities. Spherical colloidal silica nanoparticles go through multiple ion‑exchange purification steps to cut down trace metallic contaminants. Multi‑stage depth filtration is applied to completely eliminate oversized hard agglomerates. High‑purity deionized water serves as aqueous carrier. Carefully selected pH modifiers and dispersants stabilize nanoparticle suspension during pipeline transportation and continuous CMP circulation. Every production batch is tested via ICP‑MS and particle counting inspection to verify metal‑ion concentration and coarse‑particle index before shipment.

In advanced semiconductor manufacturing, wafer surface metallic contamination is a critical failure source. Even trace residual metal ions on silicon or compound semiconductor wafer surfaces will diffuse into crystal lattices during subsequent high‑temperature annealing processes. This diffusion creates leakage paths within semiconductor devices, triggering gate‑oxide breakdown, increased chip leakage current and low product yield. Besides metallic pollution, hard agglomerated abrasive particles may induce micro‑scratches across wafer surfaces. These nanoscale scratches will propagate in lithography, etching and deposition steps, leading to fatal defects for microelectronic circuits. Compound semiconductor wafers impose even stricter requirements on slurry purity because their crystal structures are more sensitive to ionic impurities.

With ultra‑low metal‑ion specification and narrow nanoparticle size distribution, JSYAPG‑S003 performs combined chemical softening and mild mechanical removal during CMP processing. The well‑dispersed spherical silica particles offer uniform polishing action over the entire wafer surface. It is suitable for single‑wafer CMP polishing equipment inside semiconductor fabs. Multiple particle‑size grades are available for rough planarization, intermediate polishing and final finishing of silicon wafer, silicon carbide, gallium arsenide and other compound semiconductor substrates.

During mass‑production operation, technicians may adjust working concentration by diluting concentrated slurry with ultra‑pure deionized water. Optimize key process parameters including polishing down‑force, platen rotation speed, slurry feeding flow rate and dedicated CMP pad selection. High‑precision continuous recirculation filtration is strongly recommended for slurry supply loop to intercept micro debris generated in polishing cycles.

Foreign particulate contamination, prolonged high‑temperature storage and direct sunlight exposure must be strictly avoided. High‑temperature environment will accelerate nanoparticle aggregation, which raises scratch risk during wafer planarization.

Major application fields include chemical‑mechanical planarization for prime silicon wafers, surface finishing of compound semiconductor wafers such as SiC and GaAs, final ultra‑clean nano‑finishing for semiconductor substrate manufacturing.

Store the product in tightly‑sealed original clean plastic drums within 10‑22℃. Keep away from direct sunlight and drastic temperature fluctuation. Slow mechanical circulation stirring is required before using long‑term stored batches.


(JSYAPG-S003) CMP Slurry Wafer Colloidal Silica Ultra-High-Purity Metal Ions <1ppb, for Silicon & Compound Wafer Planarization
JSYAPG‑S003 ultra‑high‑purity wafer CMP slurry adopts monodispersed spherical colloidal silica nano‑abrasives formulated in high‑grade deionized water. Strict purification technology guarantees total metal‑ion content below 1ppb. It is supplemented with optimized pH regulators and specialized dispersing additives under clean‑room production conditions. This CMP slurry is developed for planarization of silicon wafers and various compound semiconductor wafers. It realizes balanced chemical etching
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(JSYAPG-S003) CMP Slurry Wafer Colloidal Silica Ultra-High-Purity Metal Ions <1ppb, for Silicon & Compound Wafer Planarization

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Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.


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