JSYAPG‑SIC silicon carbide CMP slurry is a dedicated chemical‑mechanical polishing fluid for hard wide‑bandgap SiC wafers. Classified high‑hardness nano‑abrasive particles are dispersed within an ultra‑pure aqueous system together with customized strong oxidizing agents, wetting agents and suspension stabilizers. This product achieves high material‑removal efficiency for 4H‑SiC and 6H‑SiC wafers. It effectively reduces deep subsurface micro‑cracks generated during polishing and prepares high‑qua
Product Detail Page: JSYAPG‑SIC CMP slurry adopts precisely graded high‑performance nano‑abrasives as core functional component, homogeneously suspended in ultra‑pure aqueous medium. Multi‑stage particle classification and fine filtration are implemented during production to eliminate oversized abrasive grains and hard agglomerates. Strict raw‑material purification controls ionic and heavy‑metal impurities to avoid surface contamination on SiC crystal wafers. The proprietary chemical formulation includes high‑efficiency oxidizing ingredients that softly modify the hard SiC crystal surface before mechanical abrasion, which balances high removal speed with controlled subsurface damage.
Silicon carbide features extremely high Mohs hardness and stable chemical inertia, which creates huge challenges for wafer planarization. SiC substrates serve as critical base materials for high‑voltage power semiconductor chips and high‑brightness LED devices. Deep subsurface cracks and residual lattice damage left after lapping will propagate during high‑temperature epitaxy, creating stacking faults, dislocations and other crystal defects inside the epitaxial layer. These defects will severely degrade the electrical performance and long‑term reliability of finished power semiconductor components, and reduce the light‑emitting efficiency of LED chips.
This slurry combines surface chemical oxidation modification with mechanical abrasion. The oxidant weakens the top crystal layer of hard SiC, then nano‑abrasives gently strip the modified surface layer to realize fast material removal. Compared with conventional hard lapping slurries, it maintains high removal efficiency while restraining the penetration depth of micro‑cracks into the SiC crystal lattice. Uniform planarization across the whole wafer provides an epi‑ready substrate surface, which helps to improve the yield of power devices and LED chips in mass‑production lines.
Process technicians can dilute the concentrated stock slurry with ultra‑pure deionized water to adjust the effective abrasive concentration. Polishing results can be further optimized by tuning key process parameters including polishing down‑force, platen rotating speed and slurry feed flow for different single‑wafer and batch CMP polishing equipment.
Foreign chemical contamination, prolonged high‑temperature storage and freezing conditions must be strictly avoided. Freezing will break the stable dispersion of nano‑abrasive particles and trigger irreversible hard sedimentation. Once heavy sediment cannot be re‑dispersed through agitation, the slurry cannot be adopted for SiC wafer CMP processing.
Major application fields include CMP planarization for 4H‑SiC and 6H‑SiC power‑device substrates, surface finishing of SiC‑based LED substrates, pretreatment of wide‑bandgap semiconductor wafers before epitaxial deposition.
Store the product in tightly‑sealed original plastic containers within 5‑30℃. Prevent direct sunlight and freezing environments. Standard industrial packaging includes plastic drums and IBC totes for bulk liquid shipment. Gentle periodic circulation is recommended for long‑term inventory to mitigate bottom sediment accumulation.

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